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2SJ464 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ464 Chopper Regulator, DC-DC Converter and Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 64 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode: Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 20 -18 -72 45 937 -18 4.5 150 -55~150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 3.56 mH, RG = 25 , IAR = -18 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SJ464 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr VGS -10 V 4.7 0V VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -10 V, ID = -9 A VGS = -4 V, ID = -9 A VDS = -10 V, ID = -9 A Min -100 -0.8 7 VOUT 45 ns 25 Typ. 64 85 15 2900 480 1000 25 Max 10 -100 -2.0 90 120 Unit A A V V m S pF pF pF ID = -9 A RL = 5.55 Turn-on time Switching time Fall time ton tf VDD -50 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Duty < 1%, tw = 10 s = 170 Qg Qgs Qgd VDD -80 V, VGS = -10 V, ID = -18 A - 140 90 50 nC nC nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR Test Condition Min Typ. Max -18 Unit A IDRP VDSF trr Qrr IDR = -18 A, VGS = 0 V IDR = -18 A, VGS = 0 V dIDR/dt = 50 A/s 220 0.97 -72 1.7 A V ns C Marking J464 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ464 ID - VDS -20 Common source Tc = 25C Pulse test -6 -12 -50 -10 -8 -4.5 -4 -40 -10 -8 -6 -5 -4.5 ID - VDS Common source Tc = 25C Pulse test -16 Drain current ID (A) Drain current ID (A) -3.5 -4 -30 -3.5 -20 -3 -10 VGS = -2.5 V 0 0 -3 -8 -4 -2.5 VGS = -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -4 -8 -12 -16 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -20 Common source VDS = -10 V Pulse test -3.0 VDS - VGS Common source Tc = 25C Pulse test VDS (V) Drain-source voltage -16 -2.5 -2.0 Drain current ID (A) -12 -1.5 ID = -18 A -1.0 -9 -0.5 -4.5 -8 -4 25 100 Tc = -55C 0 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source VDS = -10 V Pulse test Tc = -55C 25 100 0.3 Common source (S) Forward transfer admittance Yfs 50 RDS (ON) - ID Drain-source ON resistance RDS (ON) () 30 Tc = 25C Pulse test 0.1 VGS = -4 -10 V 0.05 0.03 10 5 3 1 -1 -3 -5 -10 -30 -50 -100 0.01 -1 -3 -5 -10 -30 -50 -100 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SJ464 RDS (ON) - Tc () 0.20 Common source -100 -50 IDR - VDS Common source Tc = 25C Pulse test Drain-source ON resistance RDS (ON) (A) -4.5 Pulse test 0.15 -30 -10 -10 -5 -3 -5 0.10 VGS = -4 V 0.05 VGS = -10 V 0 -80 -9 -4.5 ID = -18 A Drain reverse current IDR -3 VGS = 0, 1 V -1 -1 -0.5 -40 0 40 80 120 160 -0.3 0 0.4 0.8 1.2 1.6 2.0 2.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 30000 -4 Vth - Tc Common source VDS = -10 V ID = -1 mA Pulse test 10000 Vth (V) Gate threshold voltage Ciss Common source VGS = 0 V f = 1 MHz Crss -1 -3 -10 -30 -100 Coss (pF) 5000 3000 -3 Capacitance C 1000 500 300 -2 -1 Tc = 25C 100 -0.1 -0.3 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) PD - Tc 80 -160 Dynamic Input/Output Characteristics Common source ID = -18 A Tc = 25C Pulse test -16 Drain power dissipation PD (W) VDS (V) 60 -120 VGS -12 Drain-source voltage 40 -80 VDS -20 V -40 -40 V -8 20 -4 0 0 40 80 120 160 0 0 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-16 Gate-source voltage VDD = -80 V VGS (V) 2SJ464 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.05 PDM 0.02 0.01 0.01 0.005 0.003 10 100 1m 10 m 100 m Single pulse t T Duty = t/T Rth (ch-c) = 2.78C/W 1 10 0.1 0.05 0.03 Pulse width tw (s) Safe Operating Area -300 1000 EAS - Tch ID max (pulse)* 1 ms* 10 ms* ID max (continuous) Avalanche energy EAS (mJ) -100 -50 100 s* 800 Drain current ID (A) -30 600 -10 -5 -3 DC operation Tc = 25C 400 200 -1 -0.5 -0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -1 -3 -10 0 25 VDSS max -30 -100 -300 50 75 100 125 150 Channel temperature (initial) Tch (C) -0.1 -0.3 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = -50 V, L = 3.56 mH Wave form 1 2 B VDSS AS = *L*I * B 2 - VDD VDSS 5 2006-11-16 2SJ464 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16 |
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